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Effective barrier height, conduction‐band offset, and the influence of p‐type δ doping at heterojunction interfaces: The case of the InAs/GaAs interface
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10.1063/1.104507
/content/aip/journal/apl/58/8/10.1063/1.104507
http://aip.metastore.ingenta.com/content/aip/journal/apl/58/8/10.1063/1.104507
/content/aip/journal/apl/58/8/10.1063/1.104507
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/content/aip/journal/apl/58/8/10.1063/1.104507
1991-02-25
2014-07-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effective barrier height, conduction‐band offset, and the influence of p‐type δ doping at heterojunction interfaces: The case of the InAs/GaAs interface
http://aip.metastore.ingenta.com/content/aip/journal/apl/58/8/10.1063/1.104507
10.1063/1.104507
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