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In y Ga1−y As/In y Al1−y As resonant tunneling diodes on GaAs
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12.The simple approximation for the potential of the conduction band minimum used here should give good agreement for peak resonant tunneling current because this value is primarily determined by the barrier energies, and quantum well and barrier dimensions, included in this model. The effect of band bending on the calculation of the peak tunneling current here should be small, as can be seen from inspection of the solution of the Poisson equation for devices with similar cathode doping, shown in Ref. 11. A comparison of calculated and observed peak bias is not warranted, however, because of band bending effects and voltage drops in the anode region.
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20.The best PVRs in RTDs have usually had binary, not ternary barrier layer materials. The change in valley current is not accounted for completely by the change in barrier height, and so alloy scattering is a candidate for contributing to the valley current. See Refs. 1, 3, and 11 and references therein.
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