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Atomic layer epitaxy of device quality GaAs with a 0.6 μm/h growth rate
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10.1063/1.105281
/content/aip/journal/apl/59/12/10.1063/1.105281
http://aip.metastore.ingenta.com/content/aip/journal/apl/59/12/10.1063/1.105281
/content/aip/journal/apl/59/12/10.1063/1.105281
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/content/aip/journal/apl/59/12/10.1063/1.105281
1991-09-16
2014-12-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Atomic layer epitaxy of device quality GaAs with a 0.6 μm/h growth rate
http://aip.metastore.ingenta.com/content/aip/journal/apl/59/12/10.1063/1.105281
10.1063/1.105281
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