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Self‐limitation in the surface segregation of Ge atoms during Si molecular beam epitaxial growth
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10.1063/1.106412
/content/aip/journal/apl/59/17/10.1063/1.106412
http://aip.metastore.ingenta.com/content/aip/journal/apl/59/17/10.1063/1.106412
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/content/aip/journal/apl/59/17/10.1063/1.106412
1991-10-21
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Self‐limitation in the surface segregation of Ge atoms during Si molecular beam epitaxial growth
http://aip.metastore.ingenta.com/content/aip/journal/apl/59/17/10.1063/1.106412
10.1063/1.106412
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