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Photoluminescent properties of Er‐doped In1−x Ga x P prepared by metalorganic vapor phase epitaxy
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10.1063/1.106055
/content/aip/journal/apl/59/18/10.1063/1.106055
http://aip.metastore.ingenta.com/content/aip/journal/apl/59/18/10.1063/1.106055
/content/aip/journal/apl/59/18/10.1063/1.106055
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/content/aip/journal/apl/59/18/10.1063/1.106055
1991-10-28
2014-10-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Photoluminescent properties of Er‐doped In1−xGaxP prepared by metalorganic vapor phase epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/59/18/10.1063/1.106055
10.1063/1.106055
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