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Comment on ‘‘Quantum capacitance of resonant tunneling diodes’’
1.Y. Hu and S. Stapleton, Appl. Phys. Lett. 58, 167 (1991).
2.S. Luryi, Appl. Phys. Lett. 47, 490 (1985).
3.M. C. Payne, J. Phys. C 19, 1145 (1986).
4.V. J. Goldman, D. C. Tsui, and J. E. Cunningham, Phys. Rev. Lett. 58, 1256 (1987);
4.V. J. Goldman, D. C. Tsui, and J. E. Cunningham, Phys. Rev. Lett. 59, 1623 (1987); , Phys. Rev. Lett.
4.V. J. Goldman, D. C. Tsui, and J. E. Cunningham, Solid State Electron. 31, 731 (1988).
5.S. Luryi, in Heterojunction band discontinuities, edited by F. Capasso and G. Margaritondo (Elsevier Science, Amsterdam, 1987), Chap. 12, p. 550.
6.Y. Nomura, S. Nara, S. Maruno, M. Gotoda, Y. Morishita, and H. Ogata, Superlatt. Microstruct. 6, 73 (1989).
7.T. C. L. G. Sollner, W. D. Goodhue, P. E. Tannenwald, C. D. Parker, and D. D. Peck, Appl. Phys. Lett. 43, 588 (1983).
8.The absence of a high-frequency response requires that as In the equivalent circuit of Fig. 1, such as effect can be simulated by adding an inductance in the branch.
9.V. Kislov and A. Kamenev, Appl. Phys. Lett. 59, 1500 (1991); and references therein.
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