Solid phase epitaxial seed for laser‐crystallized silicon on glass substrates
1.A. Gat, L. Gerzberg, J. F. Gibbons, T. J. Magee, J. Peng, and J. D. Hong, Appl. Phys. Lett. 41, 775 (1978).
2.J. P. Colinge and E. Demoulin, IEEE Electron Device Lett. EDL-2, 250 (1981).
3.J. Ohwada, M. Takabatake, H. Kawakami, Y. A. Ono, N. Konishi, T. Suzuki, and K. Miyata, Extended Abstract of19th Conf. on Solid State Devices and Materials (The Japan Society of Applied Physics, Tokyo, 1987), p. 55.
4.H. W. Lara, R. F. Pinizzoto, and A. F. Tasch, Jr., J. Electrochem. Soc. 128, 1981 (1981).
5.K. Sugahara, S. Kusunoki, Y. Inoue, T. Nishimura, and Y. Akasaka, J. Appl. Phys. 62, 4178 (1987).
6.A. Doi, J. Nakata, K. Fujibayashi, J. Konishi, Y. Nakamizo, and H. Matsuda, Extended Abstract of 37th Spring Meeting of Japan Society of Applied Physics and Related Societies, Asaka, March, 1990 (The Japan Society of Applied Physics, Tokyo, 1990), 29p-ZF-6, p. 608.
7.A. Koma, Extended Abstracts of 8th International Workshop on Future Electron Devices, March, 1990 (Research & Development Association for Future Electron Devices, Tokyo, 1990), p. 201.
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