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Very low threshold current density 1.5 μm GaInAs/AlGaInAs graded‐index separate‐confinement‐heterostructure strained quantum well laser diodes grown by organometallic chemical vapor deposition
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10.1063/1.105982
/content/aip/journal/apl/59/20/10.1063/1.105982
http://aip.metastore.ingenta.com/content/aip/journal/apl/59/20/10.1063/1.105982
/content/aip/journal/apl/59/20/10.1063/1.105982
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/content/aip/journal/apl/59/20/10.1063/1.105982
1991-11-11
2014-09-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Very low threshold current density 1.5 μm GaInAs/AlGaInAs graded‐index separate‐confinement‐heterostructure strained quantum well laser diodes grown by organometallic chemical vapor deposition
http://aip.metastore.ingenta.com/content/aip/journal/apl/59/20/10.1063/1.105982
10.1063/1.105982
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