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Influence of silicon oxide on the morphology of HF‐etched Si(111) surfaces: Thermal versus chemical oxide
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13.Triangular pits of various sizes have been observed in STM images by H. E. Hessel, A. Feltz, M. Reiter, U. Memmert, and R. J. Behm, (private communication) and by R. S. Becker (private communication).
14.Recent STM images of samples taken from the same wafers as in this study show that the average terrace size is closer to 500 Å (private communication by R. S. Becker), indicating that the IR analysis, assuming the presence of perfect domains of finite size, underestimates the domain size, probably because of the presence of point defects (see Ref. 11).
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