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Self‐aligned InGaAs/GaAs/InGaP quantum well lasers prepared by gas‐source molecular beam epitaxy with two growth steps
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10.1063/1.105854
/content/aip/journal/apl/59/23/10.1063/1.105854
http://aip.metastore.ingenta.com/content/aip/journal/apl/59/23/10.1063/1.105854
/content/aip/journal/apl/59/23/10.1063/1.105854
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/content/aip/journal/apl/59/23/10.1063/1.105854
1991-12-02
2014-10-31
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Self‐aligned InGaAs/GaAs/InGaP quantum well lasers prepared by gas‐source molecular beam epitaxy with two growth steps
http://aip.metastore.ingenta.com/content/aip/journal/apl/59/23/10.1063/1.105854
10.1063/1.105854
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