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Residual oxygen levels in AlGaAs/GaAs quantum‐well laser structures: Effects of Si and Be doping and substrate misorientation
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10.1063/1.105727
/content/aip/journal/apl/59/25/10.1063/1.105727
http://aip.metastore.ingenta.com/content/aip/journal/apl/59/25/10.1063/1.105727
/content/aip/journal/apl/59/25/10.1063/1.105727
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/content/aip/journal/apl/59/25/10.1063/1.105727
1991-12-16
2014-08-29
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Residual oxygen levels in AlGaAs/GaAs quantum‐well laser structures: Effects of Si and Be doping and substrate misorientation
http://aip.metastore.ingenta.com/content/aip/journal/apl/59/25/10.1063/1.105727
10.1063/1.105727
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