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In situ determination of phosphorus composition in GaAs1−x P x grown by gas‐source molecular beam epitaxy
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10.1063/1.105601
/content/aip/journal/apl/59/3/10.1063/1.105601
http://aip.metastore.ingenta.com/content/aip/journal/apl/59/3/10.1063/1.105601
/content/aip/journal/apl/59/3/10.1063/1.105601
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/content/aip/journal/apl/59/3/10.1063/1.105601
1991-07-15
2014-09-02
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Insitu determination of phosphorus composition in GaAs1−xPx grown by gas‐source molecular beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/59/3/10.1063/1.105601
10.1063/1.105601
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