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High quality thin gate oxide prepared by annealing low‐pressure chemical vapor deposited SiO2 in N2O
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10.1063/1.105622
/content/aip/journal/apl/59/3/10.1063/1.105622
http://aip.metastore.ingenta.com/content/aip/journal/apl/59/3/10.1063/1.105622
/content/aip/journal/apl/59/3/10.1063/1.105622
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/content/aip/journal/apl/59/3/10.1063/1.105622
1991-07-15
2014-09-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High quality thin gate oxide prepared by annealing low‐pressure chemical vapor deposited SiO2 in N2O
http://aip.metastore.ingenta.com/content/aip/journal/apl/59/3/10.1063/1.105622
10.1063/1.105622
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