No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Photovoltaic transistors based on a steady‐state internal polarization effect in asymmetric semiconductor superlattices
1.See, for example, H. Matsueda, T. Tanaka, and M. Nakamura, in Semiconductors and Semimetah, edited by T. Ikoma (Academic, New York, 1990), Vol. 30, pp. 231–284, and references therein.
2.See, for example, A. S. Grove, Physics and Technology of Semiconductor Devices (Wiley-Interscience, New York, 1967).
3.F. Capasso, S. Luryi, W. T. Tsang, C. G. Bethea, and B. F. Levine, Phys. Rev. Lett. 25, 2318 (1983).
4.S. Luryi and C. T. Liu, Phys. Rev. B (to be published).
5.J. R. Hayes, A. R. Adams, and P. D. Greene, in GaAsInP Alloy Semiconductors, edited by T. P. Pearsall (Wiley-Interscience, New York, 1982), pp. 189–212.
6.D. H. Auston, in Semiconductors and Semimetals, edited by R. B. Marcus (Academic, New York, 1990), Vol. 28, p. 1, and references therein.
Article metrics loading...
Full text loading...
Most read this month
Most cited this month