1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Compound formation at the interaction of Pd with strained layers of Si1−x Ge x epitaxially grown on Si(100)
Rent:
Rent this article for
USD
10.1063/1.105358
/content/aip/journal/apl/59/6/10.1063/1.105358
http://aip.metastore.ingenta.com/content/aip/journal/apl/59/6/10.1063/1.105358
/content/aip/journal/apl/59/6/10.1063/1.105358
Loading

Data & Media loading...

Loading

Article metrics loading...

/content/aip/journal/apl/59/6/10.1063/1.105358
1991-08-05
2014-09-30
Loading

Full text loading...

This is a required field
Please enter a valid email address
This feature is disabled while Scitation upgrades its access control system.
This feature is disabled while Scitation upgrades its access control system.
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Compound formation at the interaction of Pd with strained layers of Si1−xGex epitaxially grown on Si(100)
http://aip.metastore.ingenta.com/content/aip/journal/apl/59/6/10.1063/1.105358
10.1063/1.105358
SEARCH_EXPAND_ITEM