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MICROWAVE PHOTODIODES EXHIBITING MICROPLASMA‐FREE CARRIER MULTIPLICATION
1.Some of this material will be used in partial fulfillment of the M.S. degree requirements of the Department of Electrical Engineering, Massachusetts Institute of Technology.
2.K. M. Johnson, “Photodiode Signal Enhancement at Avalanche Breakdown Voltage,” 1964 Solid State Circuits Conference, Digest of Technical Papers, pp. 64–65.
3.A. Goetzberger, B. McDonald, R. H. Haitz, and R. M. Scarlett, “Avalanche Effects in Silicon p‐n Junctions. II. Structurally Perfect Junctions,” J. Appl. Phys. 34, 1591–1600 (June 1963).
4.C. A. Lee, R. A. Logan, R. L. Batdorf, J. J. Kleimack, and W. Wiegmann, “Ionization Rates of Holes and Electrons in Silicon,” Phys. Rev., 134, A761–A773 (May 1964).
5.L. K. Anderson, “Photodiode Detection,” Proc. Symp. on Optical Masers, Polytechnic Press, New York, pp. 549–563, 1963.
6.C. A. Lee and R. L. Batdorf, to be published. A preliminary account of this work was presented at the 1964 Solid‐State Device Research Conference, Boulder, Colo.
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