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Hydrogen coverage during Si growth from SiH4 and Si2H6
1.S. M. Mokler, W. K. Liu, N. Ohtani, and B. A. Joyce, Proceedings of the 3rd International Conference on Chemical Beam Epitaxy, J. Cryst. Growth (in press).
2.S. M. Gates and S. K. Kulkarni, Appl. Phys. Lett. 58, 2963 (1991).
3.R. J. Buss, P. Ho, W. G. Breiland, and M. E. Coltrin, J. Appl. Phys. 63, 2808 (1988).
4.M. E. Coltrin, R. J. Kee, and J.A. Miller, J. Electrochem. Soc. 133, 1206 (1986).
5.K. F. Jensen and D. B. Graves, J. Electrochem. Soc. 130, 1950 (1983).
6.C. R. Kleijn, J. Electrochem. Soc. 138, 2190 (1991).
7.J. W. Rabalais, Science 250, 522 (1990).
8.J. W. Rabalais, CRC Crit. Rev. Solid State Mater. Sci. 14, 319 (1988).
9.The gas flow rate is controlled by the conductance of a pin hole (0.5 mm) and by the pressure behind the pin hole (P). The flow rate was calibrated by pressure vs time measurements. P is maintained constant by adjustment of a needle valve. In the chamber, the flux at the sample is estimated using Ref. 10.
10.C. Campbell and S. Valone, J. Vac. Sci. Technol. A 3, 408 (1985).
11.Ionwerks, 2315 Addison, Houston, TX 77030. Schmidt Instruments, 2472 Bolsover, Houston, TX 77005.
12.J. J. Boland, Phys. Rev. Lett. 65, 3325 (1990).
13.K. Sinniah, M. G. Sherman, L. B. Lewis, W. H. Weinberg, J. T. Yates, Jr., and K. C. Janda, Phys. Rev. Lett. 62, 567 (1989).
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