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Thermally activated dopant diffusion in crystalline silicon at 200 °C?
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10.1063/1.107406
/content/aip/journal/apl/60/10/10.1063/1.107406
http://aip.metastore.ingenta.com/content/aip/journal/apl/60/10/10.1063/1.107406
/content/aip/journal/apl/60/10/10.1063/1.107406
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/content/aip/journal/apl/60/10/10.1063/1.107406
1992-03-09
2014-07-31
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Thermally activated dopant diffusion in crystalline silicon at 200 °C?
http://aip.metastore.ingenta.com/content/aip/journal/apl/60/10/10.1063/1.107406
10.1063/1.107406
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