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Structure of the stepped Si/SiO2 interface after thermal oxidation: Investigations with scanning tunneling microscopy and spot‐profile analysis of low‐energy electron diffraction
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10.1063/1.107330
/content/aip/journal/apl/60/11/10.1063/1.107330
http://aip.metastore.ingenta.com/content/aip/journal/apl/60/11/10.1063/1.107330
/content/aip/journal/apl/60/11/10.1063/1.107330
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/content/aip/journal/apl/60/11/10.1063/1.107330
1992-03-16
2014-10-02
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Structure of the stepped Si/SiO2 interface after thermal oxidation: Investigations with scanning tunneling microscopy and spot‐profile analysis of low‐energy electron diffraction
http://aip.metastore.ingenta.com/content/aip/journal/apl/60/11/10.1063/1.107330
10.1063/1.107330
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