No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Gate tunneling current in In0.53Ga0.47As junction field‐effect transistors
1.GaInAsP Alloy Semiconductors, edited by T. P. Pearsall (Wiley, New York, 1982).
2.Y. Akahori, M. Ikeda, N. Uchida, A. Kozen, J. Temmyo, J. Yoshida, T. Kokubon, and K. Suto, IEEE Photon. Technol. Lett. 3, 378 (1991).
3.D. C. W. Lo, Y. K. Chung, and S. R. Forrest, IEEE Photon. Technol. Lett. 3, 757 (1991).
4.D. C. W. Lo and S. R. Forrest, IEEE J. Lightwave Technol. 7, 957 (1989).
5.K. Ohnaka and J. Shibata, J. Appl. Phys. 63, 4714 (1988).
6.P. Carer, E. Caquot, J. C. Renaud, L. Nguyen, and A. Scavennec, Rev. Phys. Appl. 25, 453 (1990).
7.D. J. Newson, R. P. Merrett, and B. K. Ridley, 3rd International Conference on InP and Related Materials (IEEE, Cardiff, 1991), p. 427.
8.K. Yamaguchi and S. Asai, IEEE Trans. Electron Dev. ED-2S, 362 (1978).
9.C. R. Crowell and S. M. Sze, Appl. Phys. Lett. 9, 242 (1966).
10.F. Capasso, Lightwave Communications Technology, Semiconductors and Semimetals, edited by W. Tsang (Academic, New York, 1985), Vol. 22D, p. 89.
11.According to standard FET analysis, where is the junction built-in voltage (0.71 V), is the critical field, L is the gate length, is the gate-source parasitic resistance measured from the slope of the characteristics in the FET linear regime, is the drain-source current, is the drain-source voltage, and is the gate-source voltage.
12.S. Bandy, C. Nishimoto, S. Hyder, and C. Hooper, Appl. Phys. Lett. 38, 817 (1981).
13.S. R. Forrest, R. F. Leheny, R. E. Nahory, and M. A. Pollack, Appl. Phys. Lett. 37, 322 (1980).
14.L. Esaki, Phys. Rev. 109, 603 (1958).
15.D. C. W. Lo and S. R. Forrest, IEEE J. Lightwave Technol. 7, 966 (1989).
Article metrics loading...
Full text loading...
Most read this month
Most cited this month