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Single‐crystalline, epitaxial cubic SiC films grown on (100) Si at 750 °C by chemical vapor deposition
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10.1063/1.107191
/content/aip/journal/apl/60/14/10.1063/1.107191
http://aip.metastore.ingenta.com/content/aip/journal/apl/60/14/10.1063/1.107191
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/content/aip/journal/apl/60/14/10.1063/1.107191
1992-04-06
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Single‐crystalline, epitaxial cubic SiC films grown on (100) Si at 750 °C by chemical vapor deposition
http://aip.metastore.ingenta.com/content/aip/journal/apl/60/14/10.1063/1.107191
10.1063/1.107191
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