Full text loading...
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Single‐crystalline, epitaxial cubic SiC films grown on (100) Si at 750 °C by chemical vapor deposition
1.R. F. Davis, in The Physics and Chemistry of Carbides, Nitrides and Borides, edited by R. Freer (Kluwer Academic, Dordrecht, The Netherlands, 1990), p. 589.
2.Y. S. Touloukian, R. K. Kirby, R. E. Taylor, and T. Y. R. Lee, Thermophysical Properties of Matter (IFI/Plenum, New York, 1977), Vol. 13.
3.Z. Li and R. C. Bradt, J. Am. Cer. Soc. 70, 445 (1987).
4.I. Golecki, Mater. Res. Soc. Symp. Proc. 33, 3 (1984).
5.S. Nishino, H. Suhara, H. Ono, and H. Matsunami, J. Appl. Phys. 61, 4889 (1987).
6.Y. Furumura, M. Doki, F. Mieno, T. Eshita, T. Suzuki, and M. Maeda, in Proceedings of the Tenth International Conference on Chemical Vapor Deposition, edited by G. W. Cullen (The Electrochemical Society, Pennington, NJ, 1987), Vol. 87-8, p. 435.
7.Handbook of Optics, edited by W. G. Driscoll and W. Vaughn (McGraw-Hill, New York, 1978), p. 7-103.
8.W. G. Spitzer, D. A. Kleinman, and C. J. Frosch, Phys. Rev. 113, 133 (1959).
9.I. Golecki, H. L. Glass, G. Kinoshita, and T. J. Magee, Appl. Surf. Sci. 9, 299 (1981).
Article metrics loading...