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High resolution electron microscopy of crystalline–amorphous interface: An indication to Eden aggregate
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10.1063/1.107236
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    Affiliations:
    1 Department of Electrical Engineering‐Physical Electronics, Faculty of Engineering, Tel‐Aviv University, Ramat‐Aviv 69978, Israel,
    2 Service de Physique des Matériaux et Microstructures, Centre d’Etudes Nucléaires de Grenoble, 85x, 38041 Grenoble, France
    3 Service de Physique des Matériaux et Microstructures, Centre d’Etudes Nucléaires de Grenoble, 85x, 38041 Grenoble, France
    Appl. Phys. Lett. 60, 1682 (1992); http://dx.doi.org/10.1063/1.107236
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/content/aip/journal/apl/60/14/10.1063/1.107236
1992-04-06
2014-10-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High resolution electron microscopy of crystalline–amorphous interface: An indication to Eden aggregate
http://aip.metastore.ingenta.com/content/aip/journal/apl/60/14/10.1063/1.107236
10.1063/1.107236
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