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Nearly ideal InP/In0.53Ga0.47As heterojunction regrowth on chemically prepared In0.53Ga0.47As surfaces
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10.1063/1.106660
/content/aip/journal/apl/60/3/10.1063/1.106660
http://aip.metastore.ingenta.com/content/aip/journal/apl/60/3/10.1063/1.106660
/content/aip/journal/apl/60/3/10.1063/1.106660
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/content/aip/journal/apl/60/3/10.1063/1.106660
1992-01-20
2015-07-07
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nearly ideal InP/In0.53Ga0.47As heterojunction regrowth on chemically prepared In0.53Ga0.47As surfaces
http://aip.metastore.ingenta.com/content/aip/journal/apl/60/3/10.1063/1.106660
10.1063/1.106660
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