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Selective Si epitaxial growth by plasma‐enhanced chemical vapor deposition at very low temperature
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10.1063/1.106628
/content/aip/journal/apl/60/4/10.1063/1.106628
http://aip.metastore.ingenta.com/content/aip/journal/apl/60/4/10.1063/1.106628
/content/aip/journal/apl/60/4/10.1063/1.106628
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/content/aip/journal/apl/60/4/10.1063/1.106628
1992-01-27
2014-09-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Selective Si epitaxial growth by plasma‐enhanced chemical vapor deposition at very low temperature
http://aip.metastore.ingenta.com/content/aip/journal/apl/60/4/10.1063/1.106628
10.1063/1.106628
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