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Improved crystalline quality of Si1−x Ge x formed by low‐temperature germanium ion implantation
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10.1063/1.106631
/content/aip/journal/apl/60/4/10.1063/1.106631
http://aip.metastore.ingenta.com/content/aip/journal/apl/60/4/10.1063/1.106631
/content/aip/journal/apl/60/4/10.1063/1.106631
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/content/aip/journal/apl/60/4/10.1063/1.106631
1992-01-27
2014-12-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Improved crystalline quality of Si1−xGex formed by low‐temperature germanium ion implantation
http://aip.metastore.ingenta.com/content/aip/journal/apl/60/4/10.1063/1.106631
10.1063/1.106631
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