1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Principle differences between the transport properties of normal AlGaAs/InGaAs/GaAs and inverted GaAs/InGaAs/AlGaAs modulation doped heterostructures
Rent:
Rent this article for
USD
10.1063/1.106637
/content/aip/journal/apl/60/4/10.1063/1.106637
http://aip.metastore.ingenta.com/content/aip/journal/apl/60/4/10.1063/1.106637
/content/aip/journal/apl/60/4/10.1063/1.106637
Loading

Data & Media loading...

Loading

Article metrics loading...

/content/aip/journal/apl/60/4/10.1063/1.106637
1992-01-27
2014-09-02
Loading

Full text loading...

This is a required field
Please enter a valid email address
This feature is disabled while Scitation upgrades its access control system.
This feature is disabled while Scitation upgrades its access control system.
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Principle differences between the transport properties of normal AlGaAs/InGaAs/GaAs and inverted GaAs/InGaAs/AlGaAs modulation doped heterostructures
http://aip.metastore.ingenta.com/content/aip/journal/apl/60/4/10.1063/1.106637
10.1063/1.106637
SEARCH_EXPAND_ITEM