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Improvement of peak‐to‐valley ratio by the incorporation of the InAs layer into the GaSb/AlSb/GaSb/AlSb/InAs double barrier resonant interband tunneling structure
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10.1063/1.106546
/content/aip/journal/apl/60/6/10.1063/1.106546
http://aip.metastore.ingenta.com/content/aip/journal/apl/60/6/10.1063/1.106546
/content/aip/journal/apl/60/6/10.1063/1.106546
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/content/aip/journal/apl/60/6/10.1063/1.106546
1992-02-10
2014-11-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Improvement of peak‐to‐valley ratio by the incorporation of the InAs layer into the GaSb/AlSb/GaSb/AlSb/InAs double barrier resonant interband tunneling structure
http://aip.metastore.ingenta.com/content/aip/journal/apl/60/6/10.1063/1.106546
10.1063/1.106546
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