Full text loading...
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Lattice‐matched epitaxial growth of single crystalline 3C‐SiC on 6H‐SiC substrates by gas source molecular beam epitaxy
1.W. E. Nelson, F. A. Halden, and A. Rosengreen, J. Appl. Phys. 37, 353 (1966).
2.N. Kuroda, K. Shibahara, W. S. Yoo, S. Nishino, and H. Matsunami, Extended Abstracts of the 19th Conference on Solid State Devices and Materials, Tokyo (Business Center for Academic Societies Japan, Tokyo, 1987), pp. 227–230.
3.T. Ueda, H. Nishino, and H. Matsunami, J. Cryst. Growth 104, 695 (1990).
4.A. Yamashita, W. S. Yoo, T. Kimoto, and H. Matsunami, Abstracts of the 7th International Conference on Vapour Growth and Epitaxy, Nagoya (Program Committee of ICVGE-7, Kyoto, 1991), p. 77.
5.T. Fuyuki, M. Nakayama, T. Yoshinobu, H. Shiomi, and H. Matsunami, J. Cryst. Growth 95, 461 (1989).
6.T. Yoshinobu, M. Nakayama, H. Shiomi, T. Fuyuki, and H. Matsunami, J. Cryst. Growth 99, 520 (1990).
7.T. Yoshinobu, T. Fuyuki, and H. Matsunami, Jpn. J. Appl. Phys. 30, L1086 (1991).
8.W. S. Yoo, A. Yamashita, T. Kimoto, and H. Matsunami, J. Cryst. Growth (in press).
Article metrics loading...