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Lattice‐matched epitaxial growth of single crystalline 3C‐SiC on 6H‐SiC substrates by gas source molecular beam epitaxy
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10.1063/1.107430
/content/aip/journal/apl/60/7/10.1063/1.107430
http://aip.metastore.ingenta.com/content/aip/journal/apl/60/7/10.1063/1.107430
/content/aip/journal/apl/60/7/10.1063/1.107430
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/content/aip/journal/apl/60/7/10.1063/1.107430
1992-02-17
2014-12-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Lattice‐matched epitaxial growth of single crystalline 3C‐SiC on 6H‐SiC substrates by gas source molecular beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/60/7/10.1063/1.107430
10.1063/1.107430
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