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Resonant‐cavity InGaAlAs/InGaAs/InAlAs phototransistors with high gain for 1.3–1.6 μm
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10.1063/1.106464
/content/aip/journal/apl/60/8/10.1063/1.106464
http://aip.metastore.ingenta.com/content/aip/journal/apl/60/8/10.1063/1.106464
/content/aip/journal/apl/60/8/10.1063/1.106464
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/content/aip/journal/apl/60/8/10.1063/1.106464
1992-02-24
2014-07-22
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Resonant‐cavity InGaAlAs/InGaAs/InAlAs phototransistors with high gain for 1.3–1.6 μm
http://aip.metastore.ingenta.com/content/aip/journal/apl/60/8/10.1063/1.106464
10.1063/1.106464
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