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Remarkable reduction of threshold current density by substrate misorientation effects in 660 nm visible light lasers with GaInP bulk active layers
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10.1063/1.106439
/content/aip/journal/apl/60/9/10.1063/1.106439
http://aip.metastore.ingenta.com/content/aip/journal/apl/60/9/10.1063/1.106439
/content/aip/journal/apl/60/9/10.1063/1.106439
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/content/aip/journal/apl/60/9/10.1063/1.106439
1992-03-02
2014-12-26
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Remarkable reduction of threshold current density by substrate misorientation effects in 660 nm visible light lasers with GaInP bulk active layers
http://aip.metastore.ingenta.com/content/aip/journal/apl/60/9/10.1063/1.106439
10.1063/1.106439
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