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Improved InP regrowth properties in metalorganic vapor phase epitaxy by addition of CCl4
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10.1063/1.107649
/content/aip/journal/apl/61/1/10.1063/1.107649
http://aip.metastore.ingenta.com/content/aip/journal/apl/61/1/10.1063/1.107649
/content/aip/journal/apl/61/1/10.1063/1.107649
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/content/aip/journal/apl/61/1/10.1063/1.107649
1992-07-06
2014-09-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Improved InP regrowth properties in metalorganic vapor phase epitaxy by addition of CCl4
http://aip.metastore.ingenta.com/content/aip/journal/apl/61/1/10.1063/1.107649
10.1063/1.107649
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