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Damage accumulation during ion implantation of unstrained Si1−x Ge x alloy layers
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10.1063/1.107669
/content/aip/journal/apl/61/1/10.1063/1.107669
http://aip.metastore.ingenta.com/content/aip/journal/apl/61/1/10.1063/1.107669
/content/aip/journal/apl/61/1/10.1063/1.107669
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/content/aip/journal/apl/61/1/10.1063/1.107669
1992-07-06
2014-08-22
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Scitation: Damage accumulation during ion implantation of unstrained Si1−xGex alloy layers
http://aip.metastore.ingenta.com/content/aip/journal/apl/61/1/10.1063/1.107669
10.1063/1.107669
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