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High‐power multiple‐quantum‐well GaInAsSb/AlGaAsSb diode lasers emitting at 2.1 μm with low threshold current density
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10.1063/1.107630
/content/aip/journal/apl/61/10/10.1063/1.107630
http://aip.metastore.ingenta.com/content/aip/journal/apl/61/10/10.1063/1.107630
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/content/aip/journal/apl/61/10/10.1063/1.107630
1992-09-07
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High‐power multiple‐quantum‐well GaInAsSb/AlGaAsSb diode lasers emitting at 2.1 μm with low threshold current density
http://aip.metastore.ingenta.com/content/aip/journal/apl/61/10/10.1063/1.107630
10.1063/1.107630
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