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High‐power multiple‐quantum‐well GaInAsSb/AlGaAsSb diode lasers emitting at 2.1 μm with low threshold current density
1.H. K. Choi and S. J. Eglash, IEEE J. Quantum Electron. 27, 1555 (1991), and references therein.
2.H. K. Choi and S. J. Eglash, Appl. Phys. Lett. 59, 1165 (1991).
3.H. K. Choi and S. J. Eglash, presented at LEOS, San Jose, California, 4–7 November 1991, paper SDL 6.2.
4.The valved As furnace was manufactured by EPI Corp., St. Paul, MN 55101. The As source material, a 50-cc ingot of 99.999995% purity, was produced by Furukawa Co. Ltd., represented in the U.S. by United Mineral and Chemical Co. Lyndhurst, NJ 07171.
5.S. J. Eglash and H. K. Choi, in Gallium Arsenide and Related Compounds 1991, edited by G. B. Stringfellow (Institute of Physics, Bristol, 1992), p. 487.
6.P. J. A. Thijs, L. F. Tiemeijer, P. I. Kuindersma, J. J. M. Binsma, and T. Van Dongen, IEEE J. Quantum Electron. 27, 1426 (1991).
7.W. T. Tsang, F. S. Choa, M. C. Wu, Y. K. Chen, A. M. Sergent, and P. F. Sciortino, Appl. Phys. Lett. 58, 2610 (1991).
8.W. T. Tsang, F. S. Choa, R. A. Logan, T. Tanbun-Ek, A. M. Sergent, and K. W. Wecht, Appl. Phys. Lett. 60, 18 (1992).
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