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Material properties of Ga0.47In0.53As grown on InP by low‐temperature molecular beam epitaxy
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10.1063/1.107587
/content/aip/journal/apl/61/11/10.1063/1.107587
http://aip.metastore.ingenta.com/content/aip/journal/apl/61/11/10.1063/1.107587
/content/aip/journal/apl/61/11/10.1063/1.107587
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/content/aip/journal/apl/61/11/10.1063/1.107587
1992-09-14
2014-09-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Material properties of Ga0.47In0.53As grown on InP by low‐temperature molecular beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/61/11/10.1063/1.107587
10.1063/1.107587
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