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Silicon epitaxy grown by electron‐beam evaporation in ultrahigh vacuum at 200 °C
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10.1063/1.107549
/content/aip/journal/apl/61/12/10.1063/1.107549
http://aip.metastore.ingenta.com/content/aip/journal/apl/61/12/10.1063/1.107549
/content/aip/journal/apl/61/12/10.1063/1.107549
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/content/aip/journal/apl/61/12/10.1063/1.107549
1992-09-21
2014-07-29
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Silicon epitaxy grown by electron‐beam evaporation in ultrahigh vacuum at 200 °C
http://aip.metastore.ingenta.com/content/aip/journal/apl/61/12/10.1063/1.107549
10.1063/1.107549
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