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Growth rate suppression of InGaAs film grown by laser‐assisted chemical beam epitaxy
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10.1063/1.107558
/content/aip/journal/apl/61/12/10.1063/1.107558
http://aip.metastore.ingenta.com/content/aip/journal/apl/61/12/10.1063/1.107558
/content/aip/journal/apl/61/12/10.1063/1.107558
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/content/aip/journal/apl/61/12/10.1063/1.107558
1992-09-21
2014-07-11
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Growth rate suppression of InGaAs film grown by laser‐assisted chemical beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/61/12/10.1063/1.107558
10.1063/1.107558
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