1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
Observation of deep‐level‐free band edge luminescence and quantum confinement in strained Si1−x Ge x /Si single quantum well structures grown by solid source Si molecular beam epitaxy
Rent:
Rent this article for
USD
10.1063/1.108430
/content/aip/journal/apl/61/14/10.1063/1.108430
http://aip.metastore.ingenta.com/content/aip/journal/apl/61/14/10.1063/1.108430
/content/aip/journal/apl/61/14/10.1063/1.108430
Loading

Data & Media loading...

Loading

Article metrics loading...

/content/aip/journal/apl/61/14/10.1063/1.108430
1992-10-05
2014-10-21
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Observation of deep‐level‐free band edge luminescence and quantum confinement in strained Si1−xGex/Si single quantum well structures grown by solid source Si molecular beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/61/14/10.1063/1.108430
10.1063/1.108430
SEARCH_EXPAND_ITEM