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Defects in low‐temperature‐grown GaAs annealed at 800 °C
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10.1063/1.108449
/content/aip/journal/apl/61/14/10.1063/1.108449
http://aip.metastore.ingenta.com/content/aip/journal/apl/61/14/10.1063/1.108449
/content/aip/journal/apl/61/14/10.1063/1.108449
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/content/aip/journal/apl/61/14/10.1063/1.108449
1992-10-05
2014-07-30
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Defects in low‐temperature‐grown GaAs annealed at 800 °C
http://aip.metastore.ingenta.com/content/aip/journal/apl/61/14/10.1063/1.108449
10.1063/1.108449
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