1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
Molecular‐beam‐epitaxial growth of n‐AlGaAs on clean Cl2‐gas etched GaAs surfaces and the formation of high mobility two‐dimensional electron gas at the etch‐regrown interfaces
Rent:
Rent this article for
USD
10.1063/1.108496
/content/aip/journal/apl/61/14/10.1063/1.108496
http://aip.metastore.ingenta.com/content/aip/journal/apl/61/14/10.1063/1.108496
/content/aip/journal/apl/61/14/10.1063/1.108496
Loading

Data & Media loading...

Loading

Article metrics loading...

/content/aip/journal/apl/61/14/10.1063/1.108496
1992-10-05
2014-11-28
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Molecular‐beam‐epitaxial growth of n‐AlGaAs on clean Cl2‐gas etched GaAs surfaces and the formation of high mobility two‐dimensional electron gas at the etch‐regrown interfaces
http://aip.metastore.ingenta.com/content/aip/journal/apl/61/14/10.1063/1.108496
10.1063/1.108496
SEARCH_EXPAND_ITEM