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30 nm CoSi2 surface layers for contact metallization in complementary metal‐oxide‐semiconductor processes
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10.1063/1.108227
/content/aip/journal/apl/61/19/10.1063/1.108227
http://aip.metastore.ingenta.com/content/aip/journal/apl/61/19/10.1063/1.108227
/content/aip/journal/apl/61/19/10.1063/1.108227
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/content/aip/journal/apl/61/19/10.1063/1.108227
1992-11-09
2014-10-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: 30 nm CoSi2 surface layers for contact metallization in complementary metal‐oxide‐semiconductor processes
http://aip.metastore.ingenta.com/content/aip/journal/apl/61/19/10.1063/1.108227
10.1063/1.108227
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