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Large temperature changes induced by molecular beam epitaxial growth on radiatively heated substrates
1.M. A. Herman and H. Sitter, Molecular Beam Epitaxy (Springer, New York, 1989), p. 73.
2.E. S. Hellman and J. S. Harris, Jr., J. Cryst. Growth 81, 38 (1987).
3.W. S. Lee, G. W. Yoffe, D. G. Schlom, and J. S. Harris, Jr., J. Cryst. Growth 111, 131 (1991).
4.D. Kirillov and R. A. Powell, US Patent No. 5, 118,200 (June 2, 1992);
4.and MIMIC Phase III Contract No. DAAL01-89-C-0907.
5.Handbook of Optical Constants of Solids II, edited by Edward D. Palik (Academic, San Diego, 1991), p. 597.
6.The temperature dependence of the energy gap is well described by where T is the temperature of the GaAs wafer, see Ref. 4.
7.S. L. Wright, T. N. Jackson, and R. F. Marks, J. Vac. Sci. Technol. B 8, 288 (1990);
7.A. J. SpringThorpe and A. Majed, J. Vac. Sci. Technol. B 8, 266 (1990)., J. Vac. Sci. Technol. B
8.H. C. Casey, Jr. and M. B. Panish, Heterostructure Lasers: Part B (Materials & Operating Characteristics) (Academic, New York, 1978), Ch. 5, p. 9.
9.A. J. SpringThorpe and P. Mandeville, J. Vac. Sci. Technol. B 4, 853 (1986).
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