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InGaAs/AlGaAs strained quantum well laser with semi‐insulating low temperature GaAs and lateral n‐p‐n current confinement structures grown by molecular beam epitaxy
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10.1063/1.108260
/content/aip/journal/apl/61/19/10.1063/1.108260
http://aip.metastore.ingenta.com/content/aip/journal/apl/61/19/10.1063/1.108260
/content/aip/journal/apl/61/19/10.1063/1.108260
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/content/aip/journal/apl/61/19/10.1063/1.108260
1992-11-09
2014-09-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: InGaAs/AlGaAs strained quantum well laser with semi‐insulating low temperature GaAs and lateral n‐p‐n current confinement structures grown by molecular beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/61/19/10.1063/1.108260
10.1063/1.108260
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