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Quantitative analysis of strain relaxation in Ge x Si1−x /Si(110) heterostructures and an accurate determination of stacking fault energy in Ge x Si1−x alloys
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10.1063/1.108068
/content/aip/journal/apl/61/23/10.1063/1.108068
http://aip.metastore.ingenta.com/content/aip/journal/apl/61/23/10.1063/1.108068
/content/aip/journal/apl/61/23/10.1063/1.108068
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/content/aip/journal/apl/61/23/10.1063/1.108068
1992-12-07
2014-11-28
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Quantitative analysis of strain relaxation in GexSi1−x/Si(110) heterostructures and an accurate determination of stacking fault energy in GexSi1−x alloys
http://aip.metastore.ingenta.com/content/aip/journal/apl/61/23/10.1063/1.108068
10.1063/1.108068
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