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Use of electron‐beam charging for in‐process inspection of silicide complementary metal‐oxide‐semiconductor gate electrode isolation
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10.1063/1.107922
/content/aip/journal/apl/61/3/10.1063/1.107922
http://aip.metastore.ingenta.com/content/aip/journal/apl/61/3/10.1063/1.107922
/content/aip/journal/apl/61/3/10.1063/1.107922
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/content/aip/journal/apl/61/3/10.1063/1.107922
1992-07-20
2014-09-02
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Use of electron‐beam charging for in‐process inspection of silicide complementary metal‐oxide‐semiconductor gate electrode isolation
http://aip.metastore.ingenta.com/content/aip/journal/apl/61/3/10.1063/1.107922
10.1063/1.107922
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