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Very high efficiency GaInAsP/GaAs strained‐layer quantum well lasers (λ=980 nm) with GaInAsP optical confinement layers
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10.1063/1.107960
/content/aip/journal/apl/61/3/10.1063/1.107960
http://aip.metastore.ingenta.com/content/aip/journal/apl/61/3/10.1063/1.107960
/content/aip/journal/apl/61/3/10.1063/1.107960
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/content/aip/journal/apl/61/3/10.1063/1.107960
1992-07-20
2014-07-28
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Very high efficiency GaInAsP/GaAs strained‐layer quantum well lasers (λ=980 nm) with GaInAsP optical confinement layers
http://aip.metastore.ingenta.com/content/aip/journal/apl/61/3/10.1063/1.107960
10.1063/1.107960
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