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Growth of a delta‐doped silicon layer by molecular beam epitaxy on a charge‐coupled device for reflection‐limited ultraviolet quantum efficiency
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10.1063/1.107675
/content/aip/journal/apl/61/9/10.1063/1.107675
http://aip.metastore.ingenta.com/content/aip/journal/apl/61/9/10.1063/1.107675
/content/aip/journal/apl/61/9/10.1063/1.107675
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/content/aip/journal/apl/61/9/10.1063/1.107675
1992-08-31
2014-08-01
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Growth of a delta‐doped silicon layer by molecular beam epitaxy on a charge‐coupled device for reflection‐limited ultraviolet quantum efficiency
http://aip.metastore.ingenta.com/content/aip/journal/apl/61/9/10.1063/1.107675
10.1063/1.107675
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