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Comparative influence of bias and nucleation layer thickness on the heteroepitaxial growth of InN on AlN‐nucleated (111) silicon and (00.1) sapphire
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10.1063/1.108740
/content/aip/journal/apl/62/11/10.1063/1.108740
http://aip.metastore.ingenta.com/content/aip/journal/apl/62/11/10.1063/1.108740
/content/aip/journal/apl/62/11/10.1063/1.108740
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/content/aip/journal/apl/62/11/10.1063/1.108740
1993-03-15
2014-11-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Comparative influence of bias and nucleation layer thickness on the heteroepitaxial growth of InN on AlN‐nucleated (111) silicon and (00.1) sapphire
http://aip.metastore.ingenta.com/content/aip/journal/apl/62/11/10.1063/1.108740
10.1063/1.108740
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