1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Low threshold 1.5 μm quantum well lasers with continuous linear‐graded‐index InGaAsP layers prepared by organometallic vapor‐phase epitaxy
Rent:
Rent this article for
USD
10.1063/1.108745
/content/aip/journal/apl/62/11/10.1063/1.108745
http://aip.metastore.ingenta.com/content/aip/journal/apl/62/11/10.1063/1.108745
/content/aip/journal/apl/62/11/10.1063/1.108745
Loading

Data & Media loading...

Loading

Article metrics loading...

/content/aip/journal/apl/62/11/10.1063/1.108745
1993-03-15
2014-09-23
Loading

Full text loading...

This is a required field
Please enter a valid email address
This feature is disabled while Scitation upgrades its access control system.
This feature is disabled while Scitation upgrades its access control system.
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Low threshold 1.5 μm quantum well lasers with continuous linear‐graded‐index InGaAsP layers prepared by organometallic vapor‐phase epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/62/11/10.1063/1.108745
10.1063/1.108745
SEARCH_EXPAND_ITEM