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Sub‐50 nm high aspect‐ratio silicon pillars, ridges, and trenches fabricated using ultrahigh resolution electron beam lithography and reactive ion etching
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10.1063/1.108696
/content/aip/journal/apl/62/12/10.1063/1.108696
http://aip.metastore.ingenta.com/content/aip/journal/apl/62/12/10.1063/1.108696
/content/aip/journal/apl/62/12/10.1063/1.108696
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/content/aip/journal/apl/62/12/10.1063/1.108696
1993-03-22
2014-08-01
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Sub‐50 nm high aspect‐ratio silicon pillars, ridges, and trenches fabricated using ultrahigh resolution electron beam lithography and reactive ion etching
http://aip.metastore.ingenta.com/content/aip/journal/apl/62/12/10.1063/1.108696
10.1063/1.108696
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