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Transient growth rate change during gas source molecular beam epitaxy of Si1−x Ge x alloys
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10.1063/1.109473
/content/aip/journal/apl/62/17/10.1063/1.109473
http://aip.metastore.ingenta.com/content/aip/journal/apl/62/17/10.1063/1.109473
/content/aip/journal/apl/62/17/10.1063/1.109473
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/content/aip/journal/apl/62/17/10.1063/1.109473
1993-04-26
2014-08-02
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Transient growth rate change during gas source molecular beam epitaxy of Si1−xGex alloys
http://aip.metastore.ingenta.com/content/aip/journal/apl/62/17/10.1063/1.109473
10.1063/1.109473
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